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研制这种分布反馈双异质结构激光器要求在皱折层上生长出单晶层。Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.

从而深化了对异质谷间转移电子器件及其工作机理的研究。The heterostructure intervalley transferred electron effect and its devices have been thoroughly analyzed through this work.

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运用光学传输矩阵理论，研究了异质结构光子晶体的能带特性。The bandgap properties of one dimension heterostructure photonic crystal are investigated with the optical transfer matrix method.

提出了氮化物表面强极化电荷产生薄吸附层形成的二维表面态新模型。A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.

形成半导体异质结构的本发明方法的另一个实施方式包括第一个实施方式中的步骤S1～S3和S5。A second embodiment of the inventive method for forming a semiconductor heterostructure comprises steps S1 to S3 and S5 of the first embodiment.

介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。The multi valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.

据此结构设计的滤波器，在可见和近红外波段具有多频率单角空间滤波双功能。The filters designed on the basis of this heterostructure possess both functions of multi-channel narrow band filtering and sharp angular filtering.

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异质结构多层膜作为电极、引线和其他功能薄膜在半导体、集成电路和电子元器件中广泛应用。Heterostructure multilayers are extensively applied in semiconductor, IC and microelectronic field as electrode, leading wire and interconnect lines.

第一年，以弹性力学的起始应变理论，模拟量子点异质结构在磊晶过程因材料晶格不匹配引致的应变分布。In the model, the capping material in the heterostructure is omitted during the strain analysis to take into account the sequence of the fabrication process.

异质结构引进的带隙差可以实现高注入比、进一步降低了阈值电流，同时提高了输出功率。The introduce of band-gap discontinuity in heterostructure can obtain high injection ratio, decrease further threshold current and increase the output power.

在不同功率水平下，异质结激光二极管快轴与慢轴方向的远场行为应选用不同的模型模拟。Different models should be suitably chosen to simulate the far-field behavior in the fast and slow axes of heterostructure laser diode at different power levels.

在适当设计的器件中，运用输入射频信号也能激励异质谷间转移电子效应而触发输出放大信号。In the device designed properly, the heterostructure intervalley transferred electron effect can also be stimulated by an input rf signal to trigger the amplified signal.

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本文介绍了影响半导体异质外延晶片质量的主要因素，检测方法，几个典型测试结果。The main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.

HHTM既包含了异质结效应，又包含了高场输运中的速度过冲等非稳态输运效应。HHTM, including both heterostructure effect and nonstationary transport effect such as velocity overshoot effect, expends much shorter calculating time than Monte-Carlo method.

本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.