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电迁移是金属原子沿着电流方向的移动。Electromigration is the movement of metal atoms in the direction of current flow.

另一方面，扩散和电迁移效应，则造成焊点中的原子移动。Atoms in the solder joints move as a result of both diffusion and electromigration.

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针对这个问题，本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.

因此开展低成本无铅焊料润湿性和焊点电迁移研究非常有必要。So it is very necessary to study the wettability of lead-free solders and electromigration of solder joints.

随著大规模集成电路的不断发展，电迁移引起的集成电路可靠性问题日益凸现。With the development of large-scale integrated circuits, the reliability caused by electromigration becomes a key issue.

在铜互连可靠性的几个主要问题中，重点针对互连中的电迁徙和应力迁徙进行了探讨。In many issues of the reliability of copper interconnection, we place the emphasis on electromigration and stress migration.

钨由于其优良的抗电迁徙性能和宜加工特性而被广泛应用于多层金属互连技术中。Tungsten is widely used in multi-level interconnection due to its excellent gap filling and anti- electromigration capability.

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伴随积体电路高电流､小尺寸的设计变化，覆晶焊锡接点内的电迁移现象成为元件可靠度的影响关键。With higher current and smaller size trends, electromigration in flip-chip solder has become an critical of reliability concern.

在深亚微米和超深亚微米条件下，互连线失效仍然是电路失效的主要因素之一。Electromigration effect is still a dominating failure mechanism of interconnect for deep submicron and ultra-deep submicron scale.

本论文主要研究了ULSI中铜互连线的微观结构和应力及其对与电徙动MTF的影响。In this thesis, we focuse on the microstructure and stress of ULSI Cu interconnects with their impacts on MTF of the electromigration.

要改进该技术，不仅需要确定可靠性物理模型参数，而且要求掌握参数的统计分布特性。To improve the technique, both the values of parameters in physical model of electromigration and the statistic distribution property of the parameters are needed.

当在土中施加直流电场时，污染物在电渗透和电迁移作用下向相反方向运动。If a direct current electric field was applied to a polluted soil, the contamination would be motivated in a different way by the electroosmosis and electromigration.

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这种非高斯性产生自迁移动力学机制，因此通过非高斯性分析，可以从噪声中提取电迁移相关动力学信息。The non-gaussian noise origined from the danamical mechanism , so electromigration danamical information can obtained from non-gaussian analysis of the danamical parameter.

在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.

作为VLSI互连线的金属薄膜的截面积越来越小，其承受的功率密度急剧增加，使得电迁移成为电路的主要失效模式之一。Consequently, the metal interconnects of VLSI have smaller sectional area and carry increasing power density, which made the electromigration become one of the main latent damage modes.

不同焊点的温度差异引起了阴极界面的原子净流量和IMC的生长速率差异，导致不同焊点的电迁移程度差异。The different temperature generates the difference of atomic fluxes and IMCs growth rates at the cathode, which also causes the nonuniform electromigration degree in different solder joints.