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硅外延平面晶体管，用于音频和通用。Silicon epitaxial planar transistor, for use in audio and general purpose.

讨论了外延工艺和影响材料性质的因素。Epitaxial process and factors affecting property of the material were discussed.

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外延沉积接着用以形成一外延层于该外延表面上。Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

硅外延平面型，非常高速开关，偏置稳定的应用。Silicon epitaxial planar type, very high-speed switching, bias stabilizing application.

硅外延平面型晶体管。高功率，高频率，音频和通用。Silicon epitaxial planar transistor. High power, high frequency, audio and general purpose.

硅外延平面开关二极管。反向电压35五，平均正向电流150毫安。Silicon epitaxial planar switching diode. Reverse voltage 35 V. Average forward current 150 mA.

本研究对上述结果作了SEM及XRD等表征，并对外延生长机理进行了探讨。In this work, SEM and XRD were performed and the epitaxial growth mechanism was studied as well.

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从外延形貌照片中观察到了外延生长台及生长螺线。Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.

在LED生产过程中，主要有外延片生长、芯片和封装三个环节。There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.

本文提出了低-常压两步外延生长技术。A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.

应用此模型在实际生产中可以迅速地得到匹配的多组分外延层。This model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.

四探针法用在非常薄的样品，例如外延晶圆片和导电涂层上。The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings.

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利用层生长模型下的外延生长模式，是我们所研究的材料的有序结构使用的主要方法。Here, we mainly take layered growth model and epitaxial growth method to study material's ordered structure.

电调变容管的C—V特性取决于外延层掺杂浓度分布。The C-V characteristic of the electronic timing varactor depends on the distribution of epitaxial impurity density.

实验研究了一次脉冲偏场作用下外延石榴石膜硬磁泡的形成规律。The formation of hard bubbles by single-pulse bias field in epitaxial garnet films was investigated in some detail.

综述了几种用于监控薄膜外延生长的光学原位实时监测方法的进展。Variation methods of in-situ real time optical monitoring of thin film layer-by-layer epitaxial growth are presented.

为了使自混合信号最大化，我们优化了VCSEL的外围设计。We have optimized th epitaxial design of the VCSEL, in order to maximize the self-mixing signal for a given feedback.

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现代先进的外延技术使应变层锗硅材料的应用成为可能。Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.

用两探针扩展电阻法测量了外延层的杂质分布。The doping profile of the epitaxial film has been measured by means of two-point probe spreading resistance technique.

X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface.