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激子结合能随势垒层厚度LAlGaN的变化。Exciton binding energy as afunction of barrier thicknessLAlGaN.

并使激子吸收峰从红外波段进入可见光波段。And it makes the absorption peak of the exciton move to higher energy.

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效率的提高是由于EBL的限制作用而提高了激子浓度。The enhancement of efficiency is attributed to high density of exciton due to confinement of EBL.

讨论了声子之间相互作用对激子基态能量的影响。The influence of interaction between phonons on ground state energy of exciton has been discussed.

对于链内的光激发，其产物是链内激子或链内正负极化子。For intrachain photoexcitation, the output is exciton or intrachain oppositely charged polaron pair.

把光子理解为一个电磁模的元激发，光子亦具有内部运动。A photon is explained as an exciton of the electromagnetic mode, and the photon has an internal motion.

随着隔离层厚度的增加，激子转移过程的机理发生变化。However, with thickness of ZnSe barrier increasing, mechanism of the exciton transference process changed.

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本文讨论了闪烁上升时间的凝聚和气态激子系衰变机制。The mechanism of scintillation rise time based on condensed and free exciton model is discussed in this paper.

我们有系统地研究激子的束缚能和量子井的宽度、以及杂质的位置的关系。The exciton binding energy and wave function are investigated as functions of well width and the impurity position.

主要叶绿素分子间的激子相干迁移属弛豫前转移过程。The exciton coherent transport in above aggregates is analysed to be a transfer before vibrational relaxation process.

基于实验资料，光诱导结构改变被解释为三重激子极化子的凝聚。Based on experimental data, the photo-induced structural change is interpreted as condensation of triple exciton polarons.

随着施主杂质下移，激子结合能减小，激子的离解温度下降。As the impurity moves to lower interphase of QDs, the binding energy reduces, and the exciton dissociation temperature drops.

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在统一的豪泽-费许巴赫理论和激子模型的基础上，利用光学模型来处理中子诱发轻核核反应的一种新理论已经产生。A new model, based on unified Hauser-Feshbach and exciton model, for neutron induced light nucleus reaction has been developed.

人们逐渐认识到聚合物等有机材料中光致载流子的产生与激子的形成是紧密联系的。In recent years, it has been found that the photoexcited formations of the charged carriers and the exciton are tightly related.

研究表明，在弗仑克尔激子的超辐射理论中出现在辐射强度和相干度中的无规颤动是由非旋波作用所引起的。It is shown that the irregular quivers in the light intensity of exciton superfluorescence is caused by the antirotating-wave coupling.

讨论了N等电子陷阱的电声子耦合强度及有效束缚激子半径随压力的变化关系。The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed.

我们的的这个结果意味着，这种激子的束缚能很弱，或者是形成单线态的几率可能要比形成三线态的几率高得多。Our results imply that the exciton binding energy is weak, or that singlet bound states are formed with higher probability than triplets.

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电场下低维半导体结构中的激子行为无论从物理还是应用的角度都具有重要的研究价值。Exciton effects of low-dimensional semiconductor structures are of great value from the viewpoint of either physics and device applications.

在芴与DBT的共聚物中，观察到了由于激子在低带隙单体DBT位置的捕获而产生的有效的能量转移。In the copolymers of fluorene and DBT, the efficient energy transfer due to exciton trapping on narrow band-gap DBT sites has been observed.

但本文中考虑了激子有效半径随薄膜厚度的变化及其对能级结构的影响。However, the variation of the effective exciton radius with film thickness and its influence on the structure of energy levels have been considered.