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介绍了MOSFET交流方波逆变电源的工作原理。Introduce the principle of MOSFET AC square wave inverter power source.
采用了MOSFET逆变器驱动潜水螺杆电泵的方案。A submersible screw electric pump drived by a PWM MOSFET inverter is used.
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但是目前自对准的双栅MOSFET的工艺制作相当困难。But the fabrication of self aligned double gate MOSFET is too complicated.
ISFET是基于MOS结构，用于生化参数测量的传感器。ISFET is based on MOSFET structure and used to measure biochemical parameter.
如果掺硅栏N，则MOSFET被称为N沟道器件。If the silicon bar is doped N, then the MOSFET is called an N-channel device.
声音的感觉是完美的，超越了类似的MOSFET电路。The sound impression is perfect, surpassing the common Source MOSFET circuit.
对氢气、硫化氢和氨等的检测通常使用钯膜栅场效应管。Pd MOSFET are routinely used as sensors of hydrogen, hydrogen sulfide and ammonia.
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在高压MOSFET的结构中，利用栅极向漏极延伸而构成场板。Field plate is formed by poly-silicon extending to the Drain in high voltage MOSFET.
多数的光耦在用于同步MOSFET栅极驱动隔离时都太慢。Most optocouplers are too slow to use for the synchronous MOSFET gate drive isolation.
高密度功率MOSFET在DCDC变换器里面得到了广泛应用。The high density power MOSFET designs have been incorporated into DCDC buck converter.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
当一个低频MOSFET处于开状态，且一个高频MOSFET处于切换状态时，就会产生一个功率级。The powering stage occurs when an LF MOSFET is in an ON-state and an HF MOSFET is switching.
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用实验验证了该控制方法，并详细分析了同步整流管的损耗。The experiment results are given. The losses on the synchronous MOSFET are analyzed in detail.
设计了MOSFET的驱动及保护电路，并对电机进行了限流保护。Drive and protection circuits for MOSFET are designed. And current limiter method is used for motor.
此外，这种先进的MOSFET的目的是在雪崩和减刑承受高能量的时间。In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation time.
由于MOSFET在高频化下的电压、电流容量等级低，使得其输出功率容量提升受到限制。As the MOSFET with the low level voltage and current, the capacity to enhance its output power is limited.
本文研究了功率MOSFET管的安全工作区的计算及绘制方法。The calculation and drafting method in the safe operation range of POwer MOSFET are studied in this paper.
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采用双管正激式开关电源技术，成功研制了一种新型的CO2气体激光器电源。A new CO2 laser switch power supply utilizing two MOSFET forward driving technology is developed successfully.
在硬开关里场效应晶体管的开启波形拐点并不和漏源极电压值同步。In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.
文中还提出了基于电压信号检测的功率管及主电路故障检测、定位方法。A new means of MOSFET fault detection and location based on voltage signal measuring is also described in the thesis.