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首先，我们对锆覆盖在镍上后形成的金属矽化物的热稳定性作一系列的研究。First of all, we have investigated the thermal stability of nickel silicide with Zr capping.

利用多层膜可模拟共淀积多元膜，实现硅化物的浅接触。Theuse of multilayer film in imitation of codeposition can realize shallow silicide contacts.

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第一部分我们探讨矽化镍薄膜于接面二极体的制程改善。In the first section, the improvement of nickel silicide on the junction diode was demonstrated.

本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。The metal silicide layer prepared by the method has high heat stability and controllable growth speed.

半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.

以硅化镁、氯化铵与液氨为原料，模仿硅化镁法制备硅烷气体的工艺，获得反应生成的固体副产物。The solid by-product is obtained by imitating the magnesium silicide method which is used to produce silane in industry.

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当熔炉运行的时候，可以在金属溶液里加一种合适的变质剂，例如钙化剂或者其他的等价物。A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.

本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.

一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.

本发明单相钆硅化合物以及制备方法，涉及稀土硅化物材料。The invention discloses single-phase gadolinium-silicon compounds and the method for preparation, and relates to a rare earth silicide material.

碳烯和硅烯是分属于碳化物和硅化物中的两类反应活性中间体。两者甚为相似。Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.

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本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.

用XPS测定结合分峰拟合分析，研究稻草茎部、叶鞘、穗轴等部位皮层中硅化物的组成。The silicide components in cuticle of rice straw stem, leaf sheath and rice shaft were studied by means of XPS-peak-differentation-imitating analysis.

采用硅化物阻挡层和A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。And by the means of silicide , resist layer and aluminium multilayer metal lines , the questions of ohmic-contact and A1 electron mobility are resolved.

然后生长硅化物电极，厚的硅化物穿透源区浅结与下面高浓度的体区形成欧姆接触。When growing silicide electrode, the thick silicide can punch through the shallow source and form Ohm contact with body below that has high dopant concentration.

本公司是一家集医药中间体研发、生产、销售为一体的、按现代企业制度运作的股份企业。目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。Our company is a joint-stock company operated under the modern corporation system. we have a production line of organic chloride silicide nitride compounds and etc.

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这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.

硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.